Title :
Nanosecond pulses for sub-terahertz imaging from avalanching GaAs bipolar transistors
Author :
Vainshtein, S.N. ; Kostamovaara, J.T. ; Yuferev, V.S.
Author_Institution :
Dept. of Electr. & Inform. Eng., Univ. of Oulu, Oulu, Finland
fDate :
Nov. 3 2009-Oct. 6 2009
Abstract :
We present direct experimental observation of sub-terahertz emission in milliwatt-range nanosecond pulses obtained from miniature GaAs bipolar transistor chips at room temperature. The emission is attributed to the recently introduced ¿collapsing¿ field domains. This new emitter combined with the high-speed bolometers used in measurements could provide a means for developing unique sub-terahertz imagers.
Keywords :
III-V semiconductors; bipolar transistors; bolometers; gallium arsenide; high-speed optical techniques; terahertz wave imaging; GaAs; avalanching bipolar transistors; collapsing field domains; high-speed bolometers; nanosecond pulses; sub-terahertz imaging; temperature 293 K to 298 K; Bipolar transistors; Bolometers; Gallium arsenide; Optical pulses; Photodiodes; Plasma measurements; Plasma temperature; Pulse amplifiers; Pulse measurements; Semiconductor device measurement;
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Conference_Location :
Turunc-Marmaris
Print_ISBN :
978-1-4244-3848-8
Electronic_ISBN :
98-1-4244-3849-5
DOI :
10.1109/TERAMIR.2009.5379614
