Title :
Kinetics of shallow acceptor impact ionization and recombination in p-Ge
Author :
Altukhov, I.V. ; Kagan, M.S. ; Sinis, V.P. ; Paprotskiy, S.K. ; Kotelnikov, V.A.
Author_Institution :
Inst. of Radio Eng. & Electron., Russian Ac. Sci., Moscow, Russia
fDate :
Nov. 3 2009-Oct. 6 2009
Abstract :
The time evolution of current in p-Ge doped with shallow acceptors was studied. The dependences of impact ionization and recombination times on electric field and uniaxial pressure were found. The role of Poole-Frenkel ionization of shallow acceptors was analyzed.
Keywords :
Poole-Frenkel effect; electro-optical effects; electron-hole recombination; elemental semiconductors; germanium; impact ionisation; impurity states; piezo-optical effects; population inversion; semiconductor doping; semiconductor lasers; stimulated emission; Ga-doped Ge; Ge:Ga; Ge:Jk; Poole-Frenkel ionization; acceptor kinetics; current evolution; doping; electric field effect; impact ionization; p-Ge; recombination; shallow acceptors; uniaxial pressure effect; Conferences; Impact ionization; Kinetic theory;
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Conference_Location :
Turunc-Marmaris
Print_ISBN :
978-1-4244-3848-8
Electronic_ISBN :
98-1-4244-3849-5
DOI :
10.1109/TERAMIR.2009.5379631
