High-resolution X-ray characterization of mid-IR QCL structures

Author

Kubacka-Traczyk, Justyna ; Sankowska, Iwona ; Kosiel, Kamil ; Bugajski, Maciej

Author_Institution

Inst. of Electron Technol., Warsaw, Poland

fYear

2009

fDate

Nov. 3 2009-Oct. 6 2009

Firstpage

45

Lastpage

46

Abstract

In this paper, five Quantum Cascade Laser structures were investigated by using high-resolution X-ray diffractometry. The information about perfection and periodicity of the structures was derived from simulation of diffraction profiles generated using dynamical diffraction theory. HRXRD characterization enabled to optimize the growth conditions of the laser structures towards achieving the high degree of crystalline quality necessary for optimum device performance.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; periodic structures; quantum cascade lasers; semiconductor quantum wells; GaAs-Al_0.45Ga_0.55As; HRXRD; crystalline quality; dynamical diffraction theory; high-resolution X-ray diffractometry; mid-IR QCL structures; quantum cascade laser structures; structure perfection; structure periodicity; Electrons; Gallium arsenide; Molecular beam epitaxial growth; Quantum cascade lasers; Quantum well lasers; Satellites; Shape; Submillimeter wave technology; X-ray diffraction; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop

Conference_Location

Turunc-Marmaris

Print_ISBN

978-1-4244-3848-8

Electronic_ISBN

98-1-4244-3849-5

Type

conf

DOI

10.1109/TERAMIR.2009.5379637

Filename

5379637