High voltage GaAs power rectifiers with low switching and conduction losses

Author

Salih, Ali S.M. ; Slocumb, Ronald W. ; Ommen, Joe ; Thero, Christine

Author_Institution

Semicond. Products Sector, Motorola Inc., Phoenix, AZ, USA

fYear

1995

fDate

21-24 Feb 1995

Firstpage

259

Abstract

GaAs high voltage rectifiers are developed to provide short recovery time and significantly decrease switching losses experienced with Si rectifiers. Schottky and p-n diodes with 200 V and 600 V breakdown voltages were fabricated and found to improve circuit performance by increasing frequency and power density. Schottky diodes give small stored charge (5nC) and are ideal for high frequency power supplies, while p-n rectifiers allowing large current and soft recovery are advantageous as IGBT-freewheeling diodes. Stress testing and materials analysis performed indicate the robustness of GaAs, which is believed to allow the high temperature capability of GaAs to be fully utilized

Keywords

III-V semiconductors; Schottky diodes; gallium arsenide; losses; rectifying circuits; switching circuits; 200 V; 600 V; GaAs; GaAs high voltage rectifiers; IGBT-freewheeling diodes; Schottky diodes; breakdown voltages; circuit performance improvement; frequency increase; high frequency power supplies; high temperature capability; low conduction losses; low switching losses; materials analysis; p-n diodes; power density increase; short recovery time; soft recovery; stress testing; Circuit optimization; Frequency; Gallium arsenide; Insulated gate bipolar transistors; Power supplies; Rectifiers; Schottky diodes; Stress; Switching loss; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on

Print_ISBN

0-7803-2423-4

Type

conf

DOI

10.1109/PEDS.1995.404912

Filename

404912