Title :
Double-barrier superlattice infrared photodetector combined with quantum well infrared photodetector for operation at high temperature and low bias
Author :
Lin, Shih-Hung ; Chang, Che-Wei ; Kuan, Chieh-Hsiung ; Feng, J.Y. ; Lay, T.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
Nov. 3 2009-Oct. 6 2009
Abstract :
We have designed a double-barrier superlattice infrared photodetector combined with quantum well infrared photodetector which has a superlattice (SL) sandwiched between the thick and graded barriers then multiple quantum wells(MQWs) are inserted in the right side of them . The two barriers can let the photoelectrons to bounce back and forth then the photoelectrons inject through the MQWs which are used as noise filter. The detector shows high-temperature operation (~110 K) at low bias. The associated detectivity is also optimized so this device is the promising candidate of a pixel in the focal plane array.
Keywords :
focal planes; high-temperature electronics; infrared detectors; quantum well devices; semiconductor superlattices; double-barrier superlattice infrared photodetector; focal plane array; high temperature; high-temperature operation; low bias; multiple quantum wells; quantum well infrared photodetector; Conferences; Dark current; Detectors; Etching; Gallium arsenide; Photoconductivity; Photodetectors; Quantum well devices; Superlattices; Temperature;
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Conference_Location :
Turunc-Marmaris
Print_ISBN :
978-1-4244-3848-8
Electronic_ISBN :
98-1-4244-3849-5
DOI :
10.1109/TERAMIR.2009.5379654
