Title :
A 0.25 μm SiGe receiver front-end for 5 GHz applications
Author :
Matos, M. De ; Bégueret, J-B ; Lapuyade, H. ; Belot, D. ; Escotte, L. ; Deval, Y.
Author_Institution :
IXL Lab, Univ. Bordeaux 1, Talence, France
Abstract :
This paper presents the design and measurements of a receiver front end dedicated to IEEE 802.11a WLAN applications. It consists of an integrated transformer, a low noise amplifier (LNA), a mixer and a synchronous oscillator (SO) as a frequency generation device. This front-end has a gain of 22 dBV at 5.2 GHz and a good trade off between its linearity and its current consumption with an ICP1 of -17 dBm and a power consumption of 75.4 mW. The intermediate frequency is fixed at 100 MHz. This receiver front-end has been fully integrated within a 0.25 μm SiGe BiCMOS technology from STMicroelectronics.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC mixers; integrated circuit design; low noise amplifiers; radio receivers; semiconductor materials; transformers; wireless LAN; 0.25 mum; 100 MHz; 5 GHz; 5.2 GHz; 75.4 mW; BiCMOS technology; IEEE 802.11a WLAN applications; LNA; frequency generation device; integrated transformer; low noise amplifier; mixer; receiver front-end; synchronous oscillator; Energy consumption; Frequency; Germanium silicon alloys; Linearity; Low-noise amplifiers; Noise generators; Oscillators; Silicon germanium; Synchronous generators; Wireless LAN;
Conference_Titel :
Microwave and Optoelectronics, 2005 SBMO/IEEE MTT-S International Conference on
Print_ISBN :
0-7803-9341-4
DOI :
10.1109/IMOC.2005.1579980
