DocumentCode :
3081439
Title :
Effect of material composition on eigenstates of a three-dimensional heterostructure quantum ring in presence of electric field
Author :
Bhattacharyya, Souvik ; Deyasi, Arpan ; Das, Nikhil R.
Author_Institution :
Dept. of Comp. Sci. & Eng., Modern Inst. of Eng. & Technol., Bandel, India
fYear :
2012
fDate :
7-9 Dec. 2012
Firstpage :
649
Lastpage :
652
Abstract :
Eigenenergy of carriers of a three-dimensional quantum ring with cylindrical symmetry has been analytically investigated in the presence of electric field applied perpendicular to the plane of ring. Energy is calculated by varying all possible dimensions of the ring independently for different material compositions of AlxGa1-xN material, taking as an example. Results are compared with the case when field is absent. Energy states are also computed for variation of electric field upto a wide range for different compositions, and also with bandgap of the heterostrucutre. Parabolic band structure is considered for simulation purpose and upto lowest three confinement states are computed.
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; semiconductor quantum wires; wide band gap semiconductors; AlxGa1-xN; carrier eigen energy; confinement states; cylindrical symmetry; eigenstates; electric field; energy states; material composition; parabolic band structure; three-dimensional heterostructure quantum ring; Eigenvalues and eigenfunctions; Electric fields; Energy states; Materials; Quantum computing; Quantum dot lasers; Quantum dots; Eigenenergy; Electric field; Material composition; Three-dimensional quantum ring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
India Conference (INDICON), 2012 Annual IEEE
Conference_Location :
Kochi
Print_ISBN :
978-1-4673-2270-6
Type :
conf
DOI :
10.1109/INDCON.2012.6420698
Filename :
6420698
Link To Document :
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