DocumentCode
3081833
Title
Visible light generation in semiconductor nano-pillars
Author
Machado, Paulo César M ; Osório, Francisco A P ; Borges, Antônio Newton
Author_Institution
Escola de Engenharia Eletrica e de Computacao, Brazil
fYear
2005
fDate
25-28 July 2005
Firstpage
374
Lastpage
376
Abstract
We report a calculation of the two first energy levels of semiconductor nano-pillars as a function of their diameters. We have considered GaAs and InAs self-assembled quantum dots disk-like shape. The region where the visible light is emitted was delimited. Encapsulating quantum dots with diameters from this region allows the fabrication of white light-emitting diodes.
Keywords
III-V semiconductors; encapsulation; energy states; gallium arsenide; indium compounds; light emitting diodes; nanostructured materials; self-assembly; semiconductor quantum dots; GaAs; InAs; LED; diameters; energy levels; light generation; quantum dot encapsulation; self-assembled quantum dots disk-like shape; semiconductor nanopillars; white light-emitting diode fabrication; Differential equations; Effective mass; Energy states; Gallium arsenide; Light emitting diodes; Optoelectronic devices; Quantum dots; Schrodinger equation; Semiconductor diodes; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics, 2005 SBMO/IEEE MTT-S International Conference on
Print_ISBN
0-7803-9341-4
Type
conf
DOI
10.1109/IMOC.2005.1580021
Filename
1580021
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