Title :
The strain-controlled GaN growth on Si by RF-MBE
Author :
Tajimi, Daiki ; Igaki, Tatuhiro ; Sugiura, Youhei ; Yamaguchi, Tomohiro ; Honda, Tohru
Author_Institution :
Dept. of Electr. Eng. & Electron., Kogakuin Univ., Tokyo, Japan
Abstract :
A (GaN/AlN) alternating-source-feeding (ASF) buffer layer was introduced in the molecular beam epitaxy (MBE) growth of GaN film on (111) Si substrate. Residual strain in the GaN film was reduced by using the ASF buffer layer.
Keywords :
III-V semiconductors; gallium compounds; internal stresses; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; (111) Si substrate; GaN; RF-MBE; Si; alternating-source-feeding buffer layer; molecular beam epitaxy; residual strain-controlled gallium growth; semiconductor thin films; Buffer layers; Gallium nitride; Molecular beam epitaxial growth; Silicon; Strain; Substrates;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
DOI :
10.1109/OECC.2012.6276752
