Employing engineering methods for the analysis of OLEDs

We analyze typical static curves of organic light emitting diodes (OLEDs) that were obtained under mid-to-high biases, leading to forward currents ranging from contact-limited regime of injection to bulk-limited transport of majority carriers. We also present arguments to suggest that our OLEDs effectively behave as Schottky devices under static electric characterization. Two engineering methods, usually applied for inorganic Schottky diodes analysis, are shown to be also suitable for evaluation of OLEDs. As an alternative approach impedance spectroscopy measurements are employed to confirm that a Schottky-like type of behavior is adequate for modeling of OLEDs.