DocumentCode
3082365
Title
High performance CMOS converter design in TSMC 0.18-μm process
Author
Islam, Nazmul ; Islam, Syed K. ; Huq, Hasina F.
Author_Institution
Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
fYear
2005
fDate
8-10 April 2005
Firstpage
148
Lastpage
152
Abstract
This paper demonstrates the low voltage operation of a double balanced Gilbert mixer fabricated in 0.18-μm standard/bulk CMOS process. A tuned load was used to ensure the rail-to-rail swing and a source degeneration resistor was used to improve the linearity. As an upconverter, the mixer demonstrates 1.65 dB of conversion gain at an RF frequency of 1.9 GHz with an applied local oscillator power of -1.2 dBm. The noise figure of the designed mixer is 17.2 dB, and the third-order input-referred intercept point (IIP3) is 20.45 dBm.
Keywords
CMOS integrated circuits; UHF frequency convertors; UHF mixers; low-power electronics; 0.18 micron; 1.65 dB; 1.9 GHz; 17.2 dB; TSMC process; double balanced Gilbert mixer; high performance CMOS converter; linearity; low voltage operation; rail-to-rail swing; source degeneration resistor; standard/bulk CMOS process; tuned load; upconverter; CMOS process; Frequency conversion; Gain; Linearity; Local oscillators; Low voltage; Mixers; Noise figure; Radio frequency; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SoutheastCon, 2005. Proceedings. IEEE
Print_ISBN
0-7803-8865-8
Type
conf
DOI
10.1109/SECON.2005.1423235
Filename
1423235
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