An enhanced empirical large signal model of SiC MESFETs for power applications

Author

Sayed, Ahmed ; Boeck, Georg

Author_Institution

Microwave Eng. Group, Technische Univ. Berlin, Germany

fYear

2005

fDate

25-28 July 2005

Firstpage

28

Lastpage

31

Abstract

In this paper, a large signal table-based model for SiC MESFET is presented. A packaged commercially available high power MESFET device (CREE CRF24010) is adopted for the model development. The extracted bias-dependent elements of the small signal model as well as the measured DC data are mathematically described by small modification of Angelov´s formulation. Dispersion between DC and RF characteristics of the drain current is also observed and interpreted. The new model is capable to predict small signal as well as large signal performance accurately. A single stage ultra broadband 5 W power amplifier has been developed to verify the derived model. A good agreement has been obtained between simulated and measured results.

Keywords

power MESFET; semiconductor device models; silicon compounds; wide band gap semiconductors; MESFET; SiC; drain current; power amplifier; power applications; Broadband amplifiers; Data mining; MESFETs; Mathematical model; Packaging; Power amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics, 2005 SBMO/IEEE MTT-S International Conference on

Print_ISBN

0-7803-9341-4

Type

conf

DOI

10.1109/IMOC.2005.1580056

Filename

1580056