• DocumentCode
    3082580
  • Title

    Investigation into the influence of the CuInSe2 device with ITO and FTO layer

  • Author

    Chao, Wei-Min ; Lan, Wen-How ; Lee, Shao-Yi ; Chou, Yi-Chun ; Tsai, Chun-Wei ; Shih, Ming-Chang ; Wu, Yi-Da ; Tsai, Shang-I

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    671
  • Lastpage
    672
  • Abstract
    The device - Au/Ni/CIS/TCO device grown on ITO glass or FTO glass. As ITO glass be the substrates, the fill factor is better than the device deposited on FTO glass. This result showed that the FTO glass better than ITO glass.
  • Keywords
    copper compounds; gold; indium compounds; nickel; ohmic contacts; semiconductor devices; semiconductor growth; ternary semiconductors; Au-Ni-CIS-TCO device; Au-Ni-CuInSe2; CuInSe2 device; FTO glass; ITO; ITO glass; SnO2:F; device deposition; fill factor; Glass; Gold; Indium tin oxide; Nickel; Photovoltaic cells; Resistance; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2012 17th
  • Conference_Location
    Busan
  • ISSN
    2166-8884
  • Print_ISBN
    978-1-4673-0976-9
  • Electronic_ISBN
    2166-8884
  • Type

    conf

  • DOI
    10.1109/OECC.2012.6276784
  • Filename
    6276784
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3082580