DocumentCode :
3082580
Title :
Investigation into the influence of the CuInSe2 device with ITO and FTO layer
Author :
Chao, Wei-Min ; Lan, Wen-How ; Lee, Shao-Yi ; Chou, Yi-Chun ; Tsai, Chun-Wei ; Shih, Ming-Chang ; Wu, Yi-Da ; Tsai, Shang-I
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
671
Lastpage :
672
Abstract :
The device - Au/Ni/CIS/TCO device grown on ITO glass or FTO glass. As ITO glass be the substrates, the fill factor is better than the device deposited on FTO glass. This result showed that the FTO glass better than ITO glass.
Keywords :
copper compounds; gold; indium compounds; nickel; ohmic contacts; semiconductor devices; semiconductor growth; ternary semiconductors; Au-Ni-CIS-TCO device; Au-Ni-CuInSe2; CuInSe2 device; FTO glass; ITO; ITO glass; SnO2:F; device deposition; fill factor; Glass; Gold; Indium tin oxide; Nickel; Photovoltaic cells; Resistance; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
ISSN :
2166-8884
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
Type :
conf
DOI :
10.1109/OECC.2012.6276784
Filename :
6276784
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3082580
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