DocumentCode
3082713
Title
A quantitative analysis of performance benefits of 3D die stacking on mobile and embedded SoC
Author
Kim, Dongki ; Yoo, Sungjoo ; Lee, Sunggu ; Ahn, Jung Ho ; Jung, Hyunuk
Author_Institution
Dept. of Electron. & Electr. Eng., Postech, South Korea
fYear
2011
fDate
14-18 March 2011
Firstpage
1
Lastpage
6
Abstract
3D stacked DRAM improves peak memory performance. However, its effective performance is often limited by the constraints of row-to-row activation delay (tRRD), four active bank window (tFAW), etc. In this paper, we present a quantitative analysis of the performance impact of such constraints. In order to resolve the problem, we propose balancing the budget of DRAM row activation across DRAM channels. In the proposed method, an inter-memory controller coordinator receives the current demand of row activation from memory controllers and re-distributes the budget to the memory controllers in order to improve DRAM performance. Experimental results show that sharing the budget of row activation between memory channels can give average 4.72% improvement in the utilization of 3D stacked DRAM.
Keywords
DRAM chips; embedded systems; system-on-chip; 3D die stacking; 3D stacked DRAM; active bank window; current demand; embedded system-on-chip; intermemory controller coordinator; memory controllers; mobile system-on-chip; row-to-row activation delay; tFAW; tRRD; Bandwidth; Benchmark testing; Delay; Memory management; Random access memory; Stacking; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2011
Conference_Location
Grenoble
ISSN
1530-1591
Print_ISBN
978-1-61284-208-0
Type
conf
DOI
10.1109/DATE.2011.5763214
Filename
5763214
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