• DocumentCode
    3082853
  • Title

    CIGS absorption layer prepared by non-vacuum technique for solar cells

  • Author

    Liu, Chung Ping ; Chuang, Chuan Lung ; Chang, Ming Wei

  • Author_Institution
    Dept. of Photonics Eng., Yuan Ze Univ., Chungli, Taiwan
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    693
  • Lastpage
    694
  • Abstract
    CIGS absorption layer for solar cells prepared by sol-gel method and sintering with a heating rate of 15°C/sec and a holding time of 7.5 min. Measurements indicate that the film sample Cu0.976In0.811Ga0.277Se1.935 is favorable.
  • Keywords
    copper compounds; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; sintering; sol-gel processing; solar cells; ternary semiconductors; CIGS absorption layer; Cu0.976In0.811Ga0.277Se1.935; heating rate; holding time; nonvacuum technique; sintering; sol-gel method; solar cells; Absorption; Films; Gallium; Heating; Nanoparticles; Photovoltaic cells; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2012 17th
  • Conference_Location
    Busan
  • ISSN
    2166-8884
  • Print_ISBN
    978-1-4673-0976-9
  • Electronic_ISBN
    2166-8884
  • Type

    conf

  • DOI
    10.1109/OECC.2012.6276795
  • Filename
    6276795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3082853