A 2.7 V 200 kHz 49 dBm-IIP3 28 nV//spl radic/Hz input-referred-noise fully-balanced gm-C filter IC

A 0.1 dB passband-ripple 4th-order Chebyshev gm-C filter is fabricated using a BiCMOS process with n-p-n f/sub T/,of 12 GHz and CMOS minimum gate length of 0.8 /spl mu/m. CMOS transistors are used in D-to-A converters for DC offset cancellation. The 5/spl times/5 mm/sup 2/ chip includes I/Q filters, D-to-A converters and a bias circuit. The silicon active area for the filter is about 1.2 mm/sup 2//channel. The filter operates at 2.7 V and consumes 11.5 mA/channel.