Title :
Anti-resonance peak shift due to variation of effective package inductance
Author :
Kubo, Genki ; Otsuka, Hiroyuki ; Kobayashi, Ryota ; Ichimura, Wataru ; Kiyoshige, Sho ; Terasaki, Masahiro ; Sudo, Toshio
Author_Institution :
Shibaura Inst. of Technol., Tokyo, Japan
Abstract :
Power integrity is a serious issue in the in the modern CMOS digital systems, because power supply noise excited in core circuits induces logic instability and electromagnetic radiation. Therefore, chip-package co-design is becoming important by taking into consideration the total impedance of power distribution network (PDN) seen from the chip. Especially, parallel resonance peaks in the PDN due to the chip-package interaction induces the unwanted power supply fluctuation, and results in the degradation of signal integrity and electromagnetic interference (EMI). In this paper, peak frequency shift in the total PDN impedance in three test chips with different on-die PDN properties was observed when the package inductance was changed.
Keywords :
CMOS digital integrated circuits; electromagnetic interference; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; CMOS digital systems; EMI; PDN impedance; antiresonance peak shift; chip-package co-design; chip-package interaction; core circuits; effective package inductance variation; electromagnetic interference; electromagnetic radiation; logic instability; on-die PDN property; package inductance; parallel resonance peaks; peak frequency shift; power distribution network; power integrity; power supply noise; signal integrity; test chips; unwanted power supply fluctuation; Analytical models; Capacitance; Impedance; Inductance; Integrated circuit modeling; Noise; Solid modeling; anti resonance peak; power integrity;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
Conference_Location :
Nara
Print_ISBN :
978-1-4799-2313-7
DOI :
10.1109/EDAPS.2013.6724431
