Title :
Modeling of a resonant tunneling diode optical modulator
Author :
Calado, J.J.N. ; Figueiredo, J.M.L. ; Ironside, C.N.
Author_Institution :
Departamento de Fisica, Universidade do Algarve, Faro, Portugal
Abstract :
The integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the nonlinearities introduced by the double barrier resonant tunneling diode an unipolar InGaAlAs/InP optical waveguide can be employed both as optical modulator and optical detector. The modeling results of a device operating as optical modulator agree with preliminary experimental data, foreseeing for an optimized device modulation depths up to 23 dB with chirp parameter between -1 and 0 in the wavelength range analyzed (1520 nm - 1600 nm).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical modulation; optical waveguide components; photodetectors; resonant tunnelling diodes; 1520 to 1600 nm; chirp parameter; double barrier resonant tunneling diode; optical detector; resonant tunneling diode optical modulator; unipolar optical waveguide; Bandwidth; Chirp modulation; Diodes; Indium phosphide; Integrated optics; Optical detectors; Optical devices; Optical modulation; Optical waveguides; Resonant tunneling devices;
Conference_Titel :
Microwave and Optoelectronics, 2005 SBMO/IEEE MTT-S International Conference on
Print_ISBN :
0-7803-9341-4
DOI :
10.1109/IMOC.2005.1580090
