Title :
Modeling the floating-body-effect-induced drain current behavior of PD SOI NMOS device via SPICE BJT/MOS model approach
Author :
Su, J.S. ; Kuo, James B.
Author_Institution :
Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The presentation of slides shows the effective use of SPICE BJT/MOS model approach in PD SOI NMOS device modelling the floating body effect induced drain current behavior. And it also discussed the evolution of CMOS VLSI circuit versus the poly-TFT approach.
Keywords :
CMOS integrated circuits; MIS devices; SPICE; VLSI; bipolar transistors; semiconductor device models; silicon-on-insulator; CMOS VLSI circuit; PD SOI NMOS device modelling; SPICE BJT-MOS model approach; Si; floating-body-effect-induced drain current behavior modelling; poly-TFT approach; MOS devices; SPICE;
Conference_Titel :
Modeling for Circuit Simulation, 2009. TFT/CTFT '09. Compact Thin-Film Transistor
Conference_Location :
London
Print_ISBN :
978-1-4244-4373-4
Electronic_ISBN :
978-1-4244-4374-1
DOI :
10.1109/CTFT.2009.5379842
