DocumentCode :
3083473
Title :
Probability density calculation of step pulse responses at a 3-D IC channel with supply voltage fluctuations
Author :
Jingook Kim ; Eunkyeong Park ; Junho Lee ; Kwansu Shon
Author_Institution :
Sch. of ECE, Ulsan Nat. Inst. of Sci. & Technol., Ulsan, South Korea
fYear :
2013
fDate :
12-15 Dec. 2013
Firstpage :
28
Lastpage :
31
Abstract :
Causal transient step responses at a silicon interposer channel and at a wire-bond channel are calculated from the channel transfer functions obtained in frequency domain. Also, the probability densities of the step response with supply voltage fluctuations are analytically calculated.
Keywords :
elemental semiconductors; lead bonding; silicon; three-dimensional integrated circuits; transfer functions; 3D IC channel; Si; channel transfer functions; probability densities; probability density calculation; silicon interposer channel; step pulse responses; wire-bond channel; Fluctuations; Integrated circuits; Silicon; Switches; Transfer functions; Transient analysis; Voltage fluctuations; 3-D IC; causality enforcement; interposer; probability density function; supply voltage fluctuations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
Conference_Location :
Nara
Print_ISBN :
978-1-4799-2313-7
Type :
conf
DOI :
10.1109/EDAPS.2013.6724449
Filename :
6724449
Link To Document :
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