Title :
Multiple Event Transient Induced by Nuclear Reactions in CMOS Logic Cells
Author :
Rusu, C. ; Bougerol, A. ; Anghel, L. ; Weulerse, C. ; Buard, N. ; Benhammadi, S. ; Renaud, N. ; Hubert, G. ; Wrobel, F. ; Carriere, T. ; Gaillard, R.
Author_Institution :
Univ. of Nice-Sophia Antipolis, Paris
Abstract :
This paper presents a methodology for analyzing the behavior of nanometer technologies regarding "multiple event transients" (MET) caused by nuclear reaction induced by atmospheric neutrons. For the first time, currents collected by several sensitive areas of an ASIC cell resulting from a nuclear reaction are addressed by simulation. Libraries of several thousand types of currents are obtained for neutron energy range between 1 and 200 MeV. Group of currents are simultaneously injected at SPICE level and their effects are monitored on the cell output. Following an amplitude criterion, output transient duration and associated occurrence probability are recorded. A 130 nm NAND gate from ATMEL Corporation is first used to illustrate the methodology and a comparison between single event transients and multiple event transients effects is presented Finally, results regarding five different combinational cells in the ATMEL 130 nm library are presented and discussed.
Keywords :
CMOS logic circuits; NAND circuits; logic simulation; nanoelectronics; radiation hardening (electronics); ASIC cell; CMOS logic cells; NAND gate; SPICE; atmospheric neutrons; multiple event transient; nanometer technologies; nuclear reactions; occurrence probability; output transient duration; single event transients; CMOS logic circuits; Circuit simulation; Databases; Discrete event simulation; Libraries; Neutrons; Nuclear power generation; Protons; Silicon; Single event upset;
Conference_Titel :
On-Line Testing Symposium, 2007. IOLTS 07. 13th IEEE International
Conference_Location :
Crete
Print_ISBN :
0-7695-2918-6
DOI :
10.1109/IOLTS.2007.46
