Title :
Modeling of light and bias stress induced defects in nc-Si:H TFTs
Author_Institution :
London Centre for Nanotechnol., London, UK
Abstract :
The paper presents a collection of slides that discusses the modeling of light and bias stress induced defects in nc-Si:H thin film transistors. The discussion includes experimental set up, modeling consideration, gate stress of photo-TFT and the instability mechanisms in nc-Si photo-TFT.
Keywords :
elemental semiconductors; hydrogen; nanostructured materials; phototransistors; semiconductor device models; silicon; thin film transistors; Si:H; bias stress-induced defects; gate stress; instability mechanisms; light stress-induced defects; nanocrystalline silicon thin film transistors; photoTFT; Charge measurement; Current measurement; Degradation; Displays; Image sensors; Nanotechnology; Neodymium; Photovoltaic cells; Stress measurement; Threshold voltage;
Conference_Titel :
Modeling for Circuit Simulation, 2009. TFT/CTFT '09. Compact Thin-Film Transistor
Conference_Location :
London
Print_ISBN :
978-1-4244-4373-4
Electronic_ISBN :
978-1-4244-4374-1
DOI :
10.1109/CTFT.2009.5379863
