DocumentCode :
3083612
Title :
On-chip decouplig capacitor preplacement for power integrity enhancement
Author :
Byunghyun Lee ; Youngsoo Lee
Author_Institution :
Syst. LSI Div., Samsung Electron. Inc., Yongin, South Korea
fYear :
2013
fDate :
12-15 Dec. 2013
Firstpage :
48
Lastpage :
51
Abstract :
With the rapid technology scaling, logic devices are more susceptible to power distribution network (PDN) power noise. To relieve power noise, traditionally the gate capacitance of transistor is used for on-chip decoupling capacitor (decap). In this paper, we investigate the power integrity characteristics of on-chip decap, such as power noise and current consumption, and propose the decap preplacement flow to relieve them. Compared to the non-preplacement approach, experimental results show the worst instantaneous voltage drop(IVD) can be reduced by about 7.16% and average supply current can be reduced by 3.05% by using preplacement scheme.
Keywords :
capacitance; capacitors; circuit noise; interconnections; logic devices; IVD; PDN power noise; current consumption; decap preplacement flow; gate capacitance; instantaneous voltage drop; logic devices; onchip decap; onchip decoupling capacitor; power distribution network; power integrity characteristics; preplacement scheme; transistor; Capacitance; Leakage currents; Noise; Power supplies; Resource management; Routing; System-on-chip; decoupling capactior; on-chip; power integrity; preplacement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE
Conference_Location :
Nara
Print_ISBN :
978-1-4799-2313-7
Type :
conf
DOI :
10.1109/EDAPS.2013.6724454
Filename :
6724454
Link To Document :
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