A low-voltage MOSFET-only ΣΔ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation

Author

Tille, Thomas ; Sauerbrey, Jens ; Schmitt-Landsiedel, Doris

Author_Institution

Inst. of Tech. Electron., Tech. Univ. Munchen, Germany

Volume

1

fYear

2001

fDate

6-9 May 2001

Firstpage

376

Abstract

An area-efficient high-linearity MOSFET-only ΣΔ modulator using depletion-mode MOS-capacitors in combined series and parallel compensation technique is presented. The new approach joins the advantages of the series and parallel compensation of depletion-mode MOS-capacitors, achieving an optimum of linearity and area efficiency. The 2^nd-order fully-differential MOSFET-Only ΣΔ modulator was implemented in a standard 0.25 μm n-well digital CMOS process without extra layers for capacitors. The circuit operates at 1.8 V supply voltage, consumes 1 mW and achieves a SNR of 77 dB and a SNDR of 71 dB at a signal bandwidth of 8 kHz. The occupied core area is 0.06 mm²

Keywords

CMOS integrated circuits; MOS capacitors; MOSFET circuits; compensation; low-power electronics; sigma-delta modulation; speech processing; 0.25 micron; 1 mW; 1.8 V; 8 kHz; CMOS chip; area efficiency; depletion-mode MOS capacitor; linearity; low-voltage MOSFET-only sigma-delta modulator; parallel compensation; series compensation; speech processing; CMOS process; CMOS technology; Capacitance; Capacitors; Delta modulation; Delta-sigma modulation; Linearity; MOSFET circuits; Speech; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.921871

Filename

921871