Title :
Improved parameter extraction method for GaN HEMT on Si substrate
Author :
Jarndal, Anwar ; Markos, Asdesach Zena ; Kompa, Güunter
Author_Institution :
Comput. Eng. Dept., Hodeidah Univ., Hodeidah, Yemen
Abstract :
An improved parasitic elements extraction method applied to GaN on Si devices is presented. Genetic-algorithm based procedure is used to determine a high quality reliable starting values for the extrinsic parameters of proposed small-signal model. Local optimization technique is then used to refine the initial value and find the optimal value for each model element. The validity of the developed method and the proposed small-signal model is verified by comparing simulated small-signal S-parameters with measured ones of a 2-mm (10×200 μm) GaN HEMT-on-Si.
Keywords :
III-V semiconductors; gallium compounds; genetic algorithms; high electron mobility transistors; semiconductor device models; silicon; wide band gap semiconductors; GaN:Si; genetic algorithm; high electron mobility transistors; local optimization; parasitic elements extraction; small-signal S-parameters; small-signal model; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Gallium nitride; HEMTs; Microwave devices; Parameter extraction; Scattering parameters; Semiconductor device modeling; Substrates; GaN HEMT; genetic optimization; parameter extraction; semiconductor device modeling; silicon;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5514666
