• DocumentCode
    3083862
  • Title

    Thin film transistors on nanostructured layers prepared by nanowire lithography

  • Author

    Colli, A.

  • Author_Institution
    Nokia Res. Centre Cambridge, Cambridge, UK
  • fYear
    2009
  • fDate
    25-25 Sept. 2009
  • Firstpage
    1
  • Lastpage
    16
  • Abstract
    The presentation of slides shows the method of fabricating large area nanostructured thin film transistors (TFT) on a wide range of material with the use of an excellent method called the NWL (nanowire lithography). A film of interconnected NWs (or nanowire) can significantly alter the properties of the bulk material, generating the potential for expanded TFT performance and functionalities.
  • Keywords
    nanofabrication; nanolithography; nanostructured materials; nanowires; thin film transistors; bulk material property; nanostructured TFT fabrication; nanostructured layers; nanowire lithography; thin film transistors; Lithography; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Modeling for Circuit Simulation, 2009. TFT/CTFT '09. Compact Thin-Film Transistor
  • Conference_Location
    London
  • Print_ISBN
    978-1-4244-4373-4
  • Electronic_ISBN
    978-1-4244-4374-1
  • Type

    conf

  • DOI
    10.1109/CTFT.2009.5379875
  • Filename
    5379875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3083862