Title :
Soft Error Rates in 65nm SRAMs--Analysis of new Phenomena
Author :
Ruckerbauer, Franz X. ; Georgakos, Georg
Author_Institution :
Infineon Technol. AG, Munich
Abstract :
Soft error rates measured on embedded SRAMs in a 65 nm CMOS technology show a significant increase of the error rate induced by neutron radiation (NSER), while the number of soft errors due to alpha radiation (ASER) is within the expected range. In this paper it will be discussed, that the increase of the NSER values is caused by an unexpected high number of single event upsets (SEU) that flip multiple SRAM cells simultaneously (multi-bit upset). As root cause radiation induced switching of parasitic bipolar transistors was found.
Keywords :
CMOS memory circuits; SRAM chips; bipolar transistors; ASER; CMOS technology; NSER; SEU; SRAM; alpha radiation; neutron radiation; parasitic bipolar transistors; single event upsets; size 65 nm; soft error rates; Bipolar transistors; CMOS technology; Error analysis; Ionizing radiation; Logic testing; Neutrons; Random access memory; Read-write memory; Single event upset; Voltage; ASER; CMOS; NSER; SEU; SRAM; multi-bit; soft errors and radiation; upset;
Conference_Titel :
On-Line Testing Symposium, 2007. IOLTS 07. 13th IEEE International
Conference_Location :
Crete
Print_ISBN :
0-7695-2918-6
DOI :
10.1109/IOLTS.2007.60
