Title :
Statistical Device Variability and its Impact on Yield and Performance
Author_Institution :
Univ. of Glasgow, Glasgow
Abstract :
In this paper we review the major sources of variability in CMOS devices corresponding to the 45nm technology node and beyond. The focus is on intrinsic parameter fluctuations introduced by discreteness of charge and matter, which play an increasingly important role in the present and future CMOS devices and cannot be controlled or reduced by tightening the process tolerances.
Keywords :
CMOS integrated circuits; integrated circuit yield; nanotechnology; statistical analysis; technological forecasting; CMOS devices; intrinsic parameter fluctuations; process tolerances; statistical device variability; CMOS technology; Circuit simulation; Circuit testing; Circuits and systems; Fluctuations; Industrial electronics; Integrated circuit modeling; Integrated circuit technology; MOSFETs; Random access memory;
Conference_Titel :
On-Line Testing Symposium, 2007. IOLTS 07. 13th IEEE International
Conference_Location :
Crete
Print_ISBN :
0-7695-2918-6
DOI :
10.1109/IOLTS.2007.64
