Title :
Student realization in cleanroom of silicon-germanium thin film transistors
Author :
Guillet, D. ; Mourgues, K. ; Rogel, R. ; Lhermite, H. ; Bonnaud, O.
Author_Institution :
Groupe de Microelectron. Visualisation, Rennes I Univ., France
Abstract :
This tutorial is intended for graduate students specialized in microelectronics formation. This training allows the student to fabricate a simple but original device. A thin film transistor for which the active layer is made of silicon-germanium alloy has been fabricated and electrically characterized. This experiment allows the student to work on several types of process step and to evaluate the role of the active layer on the electrical characteristics of a transistor
Keywords :
CVD coatings; Ge-Si alloys; clean rooms; electronic engineering education; semiconductor device manufacture; student experiments; thin film transistors; training; LPCVD; Si-Ge; Si-Ge thin film transistors; TFT fabrication; active layer; cleanroom; electrical characterization; graduate students; microelectronics formation; silicon-germanium thin film transistors; training; Flowcharts; Germanium silicon alloys; Laboratories; Lithography; Photonic band gap; Silicon alloys; Silicon germanium; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Microelectronic Systems Education, 1999. MSE'99. IEEE International Conference on
Conference_Location :
Arlington, VA
Print_ISBN :
0-7695-0312-8
DOI :
10.1109/MSE.1999.787042
