Student realization in cleanroom of silicon-germanium thin film transistors

Author

Guillet, D. ; Mourgues, K. ; Rogel, R. ; Lhermite, H. ; Bonnaud, O.

Author_Institution

Groupe de Microelectron. Visualisation, Rennes I Univ., France

fYear

1999

fDate

1999

Firstpage

69

Lastpage

70

Abstract

This tutorial is intended for graduate students specialized in microelectronics formation. This training allows the student to fabricate a simple but original device. A thin film transistor for which the active layer is made of silicon-germanium alloy has been fabricated and electrically characterized. This experiment allows the student to work on several types of process step and to evaluate the role of the active layer on the electrical characteristics of a transistor

Keywords

CVD coatings; Ge-Si alloys; clean rooms; electronic engineering education; semiconductor device manufacture; student experiments; thin film transistors; training; LPCVD; Si-Ge; Si-Ge thin film transistors; TFT fabrication; active layer; cleanroom; electrical characterization; graduate students; microelectronics formation; silicon-germanium thin film transistors; training; Flowcharts; Germanium silicon alloys; Laboratories; Lithography; Photonic band gap; Silicon alloys; Silicon germanium; Substrates; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Systems Education, 1999. MSE'99. IEEE International Conference on

Conference_Location

Arlington, VA

Print_ISBN

0-7695-0312-8

Type

conf

DOI

10.1109/MSE.1999.787042

Filename

787042