Title :
Low-power ultrahigh-speed wireless communication with short-millimeter-wave CMOS technology
Author :
Fujishima, Minoru
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-hiroshima, Japan
Abstract :
Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application D band (110-170 GHz) is promising since it can potentially provide a wider frequency band. Thus, we have studied D-band CMOS circuits to realize low-power ultrahigh-speed wireless communication. In the D band, however, since no sufficient device model is provided, research generally has to start from device modeling. In this paper, a 10 Gbps wireless transceiver with a power consumption of 98 mW is demonstrated using the 135 GHz band, where the architecture is optimized to realize both low power and high data transfer rate.
Keywords :
CMOS integrated circuits; integrated circuit modelling; low-power electronics; millimetre wave integrated circuits; mobile radio; power consumption; radio transceivers; D-band CMOS circuits; bit rate 10 Gbit/s; device modeling; frequency 110 GHz to 170 GHz; frequency 60 GHz; high data transfer rate; low power consumption; low-power ultrahigh-speed wireless communication; mobile application; power 98 mW; short-distance high-speed wireless communication; short-millimeter-wave CMOS technology; wireless transceiver; CMOS integrated circuits; Millimeter wave technology; Receivers; Solid state circuits; Transceivers; Transmitters; Wireless communication; CMOS; device model; millimeter wave; transceiver;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602221