Low-power ultrahigh-speed wireless communication with short-millimeter-wave CMOS technology

Author

Fujishima, Minoru

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-hiroshima, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

20

Lastpage

21

Abstract

Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application D band (110-170 GHz) is promising since it can potentially provide a wider frequency band. Thus, we have studied D-band CMOS circuits to realize low-power ultrahigh-speed wireless communication. In the D band, however, since no sufficient device model is provided, research generally has to start from device modeling. In this paper, a 10 Gbps wireless transceiver with a power consumption of 98 mW is demonstrated using the 135 GHz band, where the architecture is optimized to realize both low power and high data transfer rate.

Keywords

CMOS integrated circuits; integrated circuit modelling; low-power electronics; millimetre wave integrated circuits; mobile radio; power consumption; radio transceivers; D-band CMOS circuits; bit rate 10 Gbit/s; device modeling; frequency 110 GHz to 170 GHz; frequency 60 GHz; high data transfer rate; low power consumption; low-power ultrahigh-speed wireless communication; mobile application; power 98 mW; short-distance high-speed wireless communication; short-millimeter-wave CMOS technology; wireless transceiver; CMOS integrated circuits; Millimeter wave technology; Receivers; Solid state circuits; Transceivers; Transmitters; Wireless communication; CMOS; device model; millimeter wave; transceiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602221

Filename

6602221