Title :
Influence of a pocket doping in a Schottky tunneling FET
Author :
Guin, Shilpi ; Chattopadhyay, Abhiroop ; Karmakar, A. ; Mallik, Abhidipta
Author_Institution :
Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India
Abstract :
In this paper, a detailed investigation of the impact of using a pocket in a Schottky-barrier tunneling FET (SBTFET) is reported. It is found that a pocket at both the source and the drain ends results in overall improvement of the device performance.
Keywords :
Schottky barriers; field effect transistors; semiconductor doping; tunnelling; SBTFET; Schottky-barrier tunneling FET; pocket doping; Doping; Logic gates; Silicon; Tunneling; Parasitic resistance; Schottky-barrier tunneling FET (SBTFET); short-channel effects; subthreshold swing;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602225
