DocumentCode
3084379
Title
Monte carlo simulation of seebeck coefficient of Si nanostructure with barrier layers
Author
Adisusilo, Indra Nur ; Kukita, Kentaro ; Kamakura, Yoshinari
Author_Institution
Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
fYear
2013
fDate
5-6 June 2013
Firstpage
36
Lastpage
37
Abstract
We numerically investigate the thermoelectric properties of Si nanostructures using Monte Carlo method coupled with one-dimensional Poisson equation. It is demonstrated that the barrier structure give rise to more pronounced electromotive force. This is probably because the barriers only allowing high energy electrons to pass through, which results in so-called energy filtering effect.
Keywords
Monte Carlo methods; Poisson equation; Seebeck effect; elemental semiconductors; nanostructured materials; silicon; Monte Carlo simulation; Seebeck coefficient; Si; Si nanostructure; barrier layer; electromotive force; energy filtering effect; high energy electron; one-dimensional Poisson equation; thermoelectric property; Jacobian matrices;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location
Suita
Print_ISBN
978-1-4673-6106-4
Type
conf
DOI
10.1109/IMFEDK.2013.6602229
Filename
6602229
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