Title :
Scaling scheme prospect of XCT-SOI MOSFET aiming at medical implant applications showing long lifetime with a small battery
Author :
Sato, Daisuke ; Omura, Y.
Author_Institution :
Grad. Sch. of Sci. Eng., Kansai Univ., Suita, Japan
Abstract :
This paper uses three-dimensional device simulations to consider the viability of XCT-CMOS devices in the sub-30-nm-regime. It is demonstrated that 20-nm XCT-SOI CMOS devices can support low-energy circuit applications.
Keywords :
CMOS integrated circuits; MOSFET; prosthetics; silicon-on-insulator; Si; XCT-CMOS devices; XCT-SOI MOSFET; low-energy circuit applications; medical implant applications; scaling scheme prospect; size 20 nm; small battery; three-dimensional device simulations; CMOS integrated circuits; Educational institutions; Integrated circuit modeling; Logic gates; MOSFET; Performance evaluation; Semiconductor device modeling; Design optimization; Low-energy; S/D diffusion profiles; SOI; Scaling prospects; XCT MOSFET;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602230
