Title :
Advanced design of double Doherty power amplifier with a flat efficiency range
Author :
Lee, Youngjoo ; Lee, Minhung ; Kam, S. ; Jeong, Youngmo
Author_Institution :
Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
This paper reports a new double Doherty power amplifier (DDPA) with a flat efficiency range, which consists of two-stage amplifiers. When the two-way DPA is used as the main peaking amplifier, the driving peaking cell with class-C bias turns the DPA off before the saturation of the main carrier amplifier. Three efficiency-peaking points are achieved with the additional Doherty operation by the main peaking amplifier after the saturation of the main carrier amplifier. For verifications, the driving and main amplifiers are designed and implemented with 2-W and 10-W GaN HEMTs, respectively, at 2.14 GHz. From the continuous wave (CW) results, three efficiency-peaking points are obtained at approximately 9-, 5-, and 0-dB back-off powers with over 42% drain efficiency. For one-carrier wide-band code division multiple access (WCDMA) signal, the DDPA shows good digital preditortion linearization performance.
Keywords :
code division multiple access; high electron mobility transistors; power amplifiers; CW results; DDPA flat efficiency range; GaN; HEMT; WCDMA signal; back-off powers; carrier amplifier; class-C bias; continuous wave results; digital preditortion linearization performance; double Doherty power amplifier; efficiency-peaking points; frequency 2.14 GHz; peaking amplifier; power 10 W; power 2 W; two-stage amplifiers; wideband code division multiple access; Broadband amplifiers; Gallium nitride; HEMTs; MODFETs; Multiaccess communication; Operational amplifiers; Power amplifiers; Wideband;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5514691