Title :
Growth of a sputtered Ta2O5/ZnO film and its application to an ion-sensitive field-effect transistor
Author :
Mukai, Koji ; Onaka, Takayuki ; Koike, K. ; Maemoto, T. ; Sasa, S. ; Yano, M. ; Kadokura, Sadao ; Nakamitsu, Yutaka
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
Abstract :
High-performance and transparent ion-sensitive field-effect transistor (ISFET) was prepared by a facing-target type sputtering method using the combination of a ZnO layer for the channel and a high-k Ta2O5 layer for the gate insulator. The ISFET showed a high transconductance of 2.3 mS, a low drift current of <; ±0.5 μA/h, a small gate leakage current of <; 2 nA, and a small hysteresis width of ~0.1 V. The typical pH sensitivity was ~84 μA/pH and ~55 mV/pH, and the time-constant for pH change was as small as 10 s. These parameters are comparable with those of commercially available Si ISFETs.
Keywords :
II-VI semiconductors; high-k dielectric thin films; ion sensitive field effect transistors; leakage currents; semiconductor growth; semiconductor thin films; sputter deposition; tantalum compounds; zinc compounds; ISFET; Ta2O5-ZnO; facing-target type sputtering method; gate insulator; gate leakage current; high-k layer; pH change; sputtered film growth; transparent ion sensitive field effect transistor; Charge carrier processes; Companies; Logic gates; Materials; Facing-target type sputtering; ISFET; Ta2O5; ZnO;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602233
