Title :
Type II band lineup in SAB-Based GaAs/Si heterojunctions
Author :
Morimoto, Masayuki ; Liang, Justin ; Nishida, Shuichi ; Miyazaki, Toshimasa ; Shigekawa, Naoteru
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
The electrical properties of GaAs/Si heterojuctions fabricated by using surface-activated bonding were experimentally investigated. The results of measurements suggested that the heterostructures revealed type-II band lineup.
Keywords :
III-V semiconductors; carrier density; elemental semiconductors; epitaxial growth; gallium arsenide; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; silicon; GaAs-Si; carrier density; electrical properties; surface-activated bonding-based GaAs-Si heterojunctions; type II band lineup; Capacitance; Energy measurement; Gallium arsenide; Heating; Silicon; GaAs; Si; heterostructures; surface-activated bonding;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602234
