Title :
Effect of non-parabolic band structure on quantum confined electronic states in 4H-SiC inversion layers
Author :
Watanabe, Ryuji ; Kamakura, Yoshinari
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
We calculate two dimensional electronic states in 4H-SiC inversion layers based on empirical pseudopotential approach, and the nonparabolicity effects on the quantum confinement are discussed. It is shown that the in-plane effective mass for electrons significantly increases under the strong confinement conditions in the case of (0001) oriented substrate, eventually causing the degradation of the inversion layer mobility.
Keywords :
band structure; effective mass; inversion layers; pseudopotential methods; silicon compounds; wide band gap semiconductors; (0001) oriented substrate; 4H-SiC inversion layers; SiC; empirical pseudopotential approach; in-plane effective mass; inversion layer mobility; nonparabolic band structure effect; quantum confined electronic states; quantum confinement; two-dimensional electronic states; Approximation methods; Degradation; Educational institutions; MOSFET; Modulation; Silicon carbide; Substrates; 4H-SiC; MOSFET; empirical pseudopotential method; inversion layer; subband structure;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602236
