Effect of non-parabolic band structure on quantum confined electronic states in 4H-SiC inversion layers

Author

Watanabe, Ryuji ; Kamakura, Yoshinari

Author_Institution

Grad. Sch. of Eng., Osaka Univ., Suita, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

52

Lastpage

53

Abstract

We calculate two dimensional electronic states in 4H-SiC inversion layers based on empirical pseudopotential approach, and the nonparabolicity effects on the quantum confinement are discussed. It is shown that the in-plane effective mass for electrons significantly increases under the strong confinement conditions in the case of (0001) oriented substrate, eventually causing the degradation of the inversion layer mobility.

Keywords

band structure; effective mass; inversion layers; pseudopotential methods; silicon compounds; wide band gap semiconductors; (0001) oriented substrate; 4H-SiC inversion layers; SiC; empirical pseudopotential approach; in-plane effective mass; inversion layer mobility; nonparabolic band structure effect; quantum confined electronic states; quantum confinement; two-dimensional electronic states; Approximation methods; Degradation; Educational institutions; MOSFET; Modulation; Silicon carbide; Substrates; 4H-SiC; MOSFET; empirical pseudopotential method; inversion layer; subband structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602236

Filename

6602236