I–V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures

Author

Ui, Toshimasa ; Kudo, Motoi ; Suzuki, Toshi-kazu

Author_Institution

Center for Nano Mater. & Technol., Japan Adv. Inst. of Sci. & Technol. (JAIST), Nomi, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

54

Lastpage

55

Abstract

We investigated I-V characteristics of Al_xTi_yO/GaAs(001) metal-insulator-semiconductor structures, in which Al_xTi_yO thin films were prepared by atomic layer deposition utilizing alternative supply of Al₂O₃ and TiO₂ precursors. From Poole-Frenkel plots, we estimated dielectric constants of Al_xTi_yO thin films, which are useful as high-k dielectrics for III-V device processing.

Keywords

MIM structures; Poole-Frenkel effect; aluminium compounds; atomic layer deposition; gallium arsenide; high-k dielectric thin films; permittivity; Al_xTi_yO-GaAs; GaAs; Poole-Frenkel plots; atomic layer deposition; dielectric constants; high-k dielectrics; metal-insulator-semiconductor structures; thin films; Aluminum oxide; Dielectric constant; High K dielectric materials; III-V semiconductor materials; Insulators; Substrates; AlxTiyO/GaAs(001); I–V characteristics; III–V metal-insulator-semiconductor (MIS); Poole-Frenkel plot;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602237

Filename

6602237