Title :
Formation of low ohmic contacts to AlGaN/GaN heterostructures using Ti/Al-based metal stack
Author :
Maeta, Ryo ; Tokuda, Hirokuni ; Kuzuhara, Masaaki
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
In this paper, we describe the dependence of ohmic contact resistance on annealing temperature in AlGaN/GaN heterostructures with ohmic metal stacks of Ti/Al/Ni/Au and Ti/Al/Mo/Au. A minimum ohmic contact resistance of 0.28 Ωmm was attained for Ti/Al/Mo/Au by annealing at 850°C, while that of 0.44 Ωmm was obtained for Ti/Al/Ni/Au by annealing at 900°C. The surface morphology after annealing was much better for Ti/Al/Mo/Au, indicating that Ti/Al/Mo/Au is a better choice for an ohmic contact metal in AlGaN/GaN heterostructures.
Keywords :
III-V semiconductors; aluminium compounds; annealing; contact resistance; gallium compounds; ohmic contacts; semiconductor heterojunctions; surface morphology; wide band gap semiconductors; AlGaN-GaN; annealing; heterostructures; ohmic contact resistance; ohmic metal stacks; surface morphology; temperature 850 degC; temperature 900 degC; Aluminum gallium nitride; Annealing; Gallium nitride; Gold; Nickel; Ohmic contacts; AlGaN/GaN; Ti-Al based; ohmic conract;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602238
