Flexible ZnO thin-film transistors on plastic substrates produced at room temperature

Author

Sun, Yue ; Kimura, Yuichi ; Maemoto, T. ; Sasa, S.

Author_Institution

Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

60

Lastpage

61

Abstract

We fabricated flexible ZnO-based thin-film transistors (TFTs) at room temperature and characterized the TFTs. ZnO films were deposited on polyethylene naphthalate (PEN) substrates by pulsed laser deposition (PLD). We succeeded in fabricating ZnO TFTs on PEN substrates. A 4-μm-long gate device had a transconductance of 21.5 mS/mm and an on/off ratio of 1.4×10⁷. The ZnO TFTs operated even at a bending radius of 10 mm without any significant change in their operation characteristics.

Keywords

II-VI semiconductors; pulsed laser deposition; semiconductor device manufacture; thin film transistors; wide band gap semiconductors; zinc compounds; TFT; ZnO; plastic substrates; polyethylene naphthalate substrates; pulsed laser deposition; size 10 mm; size 4 mum; temperature 293 K to 298 K; thin-film transistors; transconductance; Thin film transistors; Zinc oxide; Zinc Oxide; flexible; plastic substrate; room-temperature process; thin-film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602240

Filename

6602240