Title :
Fabrication of zinc oxide thin film transistors using a facing-targets sputtering method
Author :
Okada, Yoshitaka ; Morita, Ryuji ; Ogata, Kohichi ; Koike, K. ; Maemoto, T. ; Yano, M. ; Sasa, S.
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
Abstract :
IZO thin-film transistors fabricated using facing targets sputtering and a heat treatment at 400°C showed a very high transconductance as high as 91 mS/mm.
Keywords :
heat treatment; indium; semiconductor doping; sputtering; thermal management (packaging); thin film transistors; zinc compounds; ZnO:In; facing-targets sputtering method; heat treatment; temperature 400 C; transconductance; zinc oxide thin film transistors; Films; Heating; Facing-Targets Sputtering; Thin Film Transistor; Zinc Oxide;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602241
