Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures

Author

Kobayashi, Yoshiyuki ; Saito, Takashi ; Tokuda, Hirokuni ; Kuzuhara, Masaaki

Author_Institution

Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

64

Lastpage

65

Abstract

This paper describes electrical characteristics of lateral tunnel diodes fabricated on an AlGaN/GaN heterostructure. Our lateral tunnel diode consists of a recessed Schottky source, in contact with the two-dimensional electron gas, and a non-recessed ohmic drain. We have fabricated three different device structures to study the current path. By analyzing conduction current components, we have achieved good tunnel junctions having lateral Schottky electrodes directly contacting to the GaN channel layer with 2DEG.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; high electron mobility transistors; tunnel diodes; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; 2DEG; AlGaN-GaN; AlGaN-GaN heterostructures; GaN channel layer; Schottky electrodes; Schottky source; conduction current components; current path; device structures; electrical charaterization; lateral tunnel diodes; lateral tunnel junctions; nonrecessed ohmic drain; Aluminum gallium nitride; Gallium nitride; HEMTs; Junctions; MODFETs; Schottky diodes; Tunneling; AlGaN/GaN heterostructures; TJ-FET; lateral tunnel junctions;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602242

Filename

6602242