High-voltage AlGaN/GaN HEMTs fabricated on free-standing GaN substrates

Author

Akira, K. ; Asano, Takashi ; Tokuda, Hirokuni ; Kuzuhara, Masaaki

Author_Institution

Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

68

Lastpage

69

Abstract

This paper describes DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a free-standing GaN substrate. The three terminal breakdown voltage of the fabricated HEMT with a gate length of 3 μm exhibited a linear increase with increasing the gate-to-drain distance (L_gd), reaching more than 1200 V at L_gd=25 μm. It was found that the ON/OFF ratio in the drain current was only 10⁴, indicating the need for further improvements in buffer structure design.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; substrates; wide band gap semiconductors; AlGaN-GaN; DC characteristics; ON/OFF ratio; buffer structure design; drain current; free-standing substrate; gate length; gate-to-drain distance; high electron mobility transistors; high-voltage HEMT; terminal breakdown voltage; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage currents; MODFETs; Silicon carbide; Substrates; AlGaN/GaN; HEMT; breakdown voltage; free-standing GaN;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602244

Filename

6602244