Enhancement of photoluminescence due to one-dimensional photonic crystal

Author

Shobudani, Kohei ; Morifuji, Masato

Author_Institution

Grad. Sch. of Eng., Osaka Univ., Suita, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

70

Lastpage

71

Abstract

We report on interplay between photonic crystal and photoluminescence in a one-dimensional photonic crystal. The one-dimensional photonic crystal reflects light within a certain range of wavelength. This range of wavelength is called photonic band gap. We measured reflectivity by changing incident angle of probe light, so as to shift the region of large reflectivity. We found that photoluminescence is observed only when PL wavelength falls in the photonic band gap. This result indicates that PL is intensified due to photonic crystal.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; multilayers; photoluminescence; photonic band gap; photonic crystals; photoreflectance; semiconductor epitaxial layers; GaAs-Al_xGa_1-xAs; multilayer; one-dimensional photonic crystal; photoluminescence enhancement; photonic band gap; probe light incident angle; reflectivity; semiconductor epitaxial layers; Gallium arsenide; Photoluminescence; Photonic band gap; Probes; Reflectivity; Wavelength measurement; photoluminescence; photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602245

Filename

6602245