Title :
Low resistance ohmic contacts to n-InSb employing Sn-alloys
Author :
Hosotani, K. ; Ito, Takao ; Yasui, Yuichiro ; Nakayama, Keisuke ; Kadoda, A. ; Mori, Marco ; Maezawa, K.
Author_Institution :
Grad. Sch. of Sci. & Eng., Univ. of Toyama, Toyama, Japan
Abstract :
This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 Ωmm can be obtained without anomalous alloy extension.
Keywords :
III-V semiconductors; MOSFET; contact resistance; gold; indium compounds; nickel; ohmic contacts; semiconductor-metal boundaries; surface diffusion; tin; titanium; InSb-Sn-Au-Ni-Ti-Au; Sn-based alloys; anomalous alloy extension; barrier layer; contact resistance; diffusion; low-resistance ohmic contacts; metal stack; ohmic metal; Annealing; Gold; Tin; InSb; MOSFET; Sn-alloy; energy dispersive X-ray spectrometry; ohmic contact;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602246
