Title :
Comparative study of PE-BPSG and HDP-PSG as PMD for 0.25 μm memory device
Author :
Yu, Jengyi ; Gopalan, Prabhuram ; Feng, Jeff
Author_Institution :
Cypress Semicond., San Jose, CA, USA
Abstract :
A pre-metal dielectric (PMD) process of phosphosilicate glass (PSG) was developed by using high-density plasma (HDP) CVD. The HDP-PSG process was successfully integrated to a self-aligned contact (SAC) structure, with AR of 8:1 and a bottom contact size of 0.25 μm, in the diffusion contact level. No post-deposition reflow was required to complete gap fill. SRAM device characteristics showed that breakdown voltage and transistor threshold voltage of devices with HDP-PSG are comparable with those with PE-BPSG. The yield results showed that HDP-PSG yielded 5 to 10% better than PE-BPSG
Keywords :
SRAM chips; borosilicate glasses; dielectric thin films; electric breakdown; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; phosphosilicate glasses; plasma CVD; plasma density; 0.25 micron; B2O3-P2O5-SiO2; BPSG; HDP CVD; HDP-PSG; HDP-PSG pre-metal dielectric; HDP-PSG process; P2O5-SiO2; PE-BPSG; PE-BPSG pre-metal dielectric; PMD; PSG; SAC structure; SRAM; SRAM device characteristics; bottom contact size; breakdown voltage; diffusion contact level; gap fill; high-density plasma CVD; memory device; phosphosilicate glass; post-deposition reflow; pre-metal dielectric process; process yield; self-aligned contact structure; transistor threshold voltage; Absorption; Atomic layer deposition; Boron; Etching; Glass; Moisture; Semiconductor films; Silicon; Substrates; Testing;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787070
