Title :
Fluorine effects on silicidation of BF2+-implanted narrow poly lines
Author :
Yap, C.W. ; Soh-Yun Siah ; Lim, E.H. ; Lee, T.K. ; Gn, F.H.
Author_Institution :
Dept. of Res. & Dev., Chartered Semicond. Manuf., Singapore
Abstract :
The use of BF2+ for p+ source/drain implant has resulted in void formation in TiSi2 films on p+ poly and diffusion regions due to the interaction between fluorine outdiffusion and Ti silicidation. When using B+ instead of BF2+, no voids were observed. Deposition of a TEOS layer (150 Å) as a fluorine gettering source before p+ activation anneal reduces the number of voids formed considerably. The sheet resistance of the silicided p+ narrow poly has improved substantially with the reduction or elimination of the fluorine-induced effects
Keywords :
annealing; boron compounds; chemical interdiffusion; doping profiles; elemental semiconductors; getters; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; ion implantation; oxidation; silicon; titanium compounds; voids (solid); 150 angstrom; B+ implantation; BF2+-implanted narrow poly lines; TEOS layer deposition; Ti silicidation; TiSi2 films; TiSi2-Si:B; TiSi2-Si:BF2; TiSi2-SiO2-Si:BF2; diffusion region; fluorine effects; fluorine gettering source; fluorine outdiffusion; fluorine-induced effects; p+ dopant activation anneal; p+ poly region; p+ source/drain implant; sheet resistance; silicidation; silicided p+ narrow poly; void formation; voids; Annealing; Boron; CMOS technology; Electric resistance; Furnaces; Gettering; Implants; Isolation technology; Silicidation; Silicides;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787071
