DocumentCode
3084684
Title
Fabrication of zinc oxide transparent thin film transistors on glass substrates by sol-gel method
Author
Sasaki, Seishi ; Sasa, S. ; Ogata, Kohichi ; Maemoto, T.
Author_Institution
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
fYear
2013
fDate
5-6 June 2013
Firstpage
76
Lastpage
77
Abstract
We investigated the effect of indium incorporation to ZnO thin films produced by sol-gel method. We characterized the ZnO thin films using AFM, XRD, and XPS and revealed that the indium atoms are incorporated in the ZnO films and improves the c-axis orientation. We confirmed the transistor operation on the glass substrate.
Keywords
II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; sol-gel processing; thin film transistors; zinc compounds; AFM; XPS; XRD; ZnO; ZnO thin films; c-axis orientation; glass substrates; sol-gel method; transparent thin film transistors; Films; Glass; Indium; Substrates; Thin film transistors; X-ray scattering; Zinc oxide; Sol-gel; TFT; ZnO;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location
Suita
Print_ISBN
978-1-4673-6106-4
Type
conf
DOI
10.1109/IMFEDK.2013.6602248
Filename
6602248
Link To Document