Title :
Electromigration simulation under DC/AC stresses considering microstructure
Author :
Zhang, Wei ; Bernstein, Joseph B.
Author_Institution :
Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA
Abstract :
In this work, we present a dynamic finite difference simulation on the stress evolution along an IC interconnect under both DC and AC current densities, while taking into account the inhomogeneity of grain size and grain boundary orientation. Furthermore, we related both the accelerating stress and microstructural conditions to the lifetime by assuming certain built-up stress levels as failure criteria
Keywords :
circuit simulation; current density; electromigration; failure analysis; finite difference methods; grain boundaries; grain size; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; AC current density; AC stress; DC current density; DC stress; IC interconnect; accelerating stress; built-up stress levels; dynamic finite difference simulation; electromigration simulation; failure criteria; grain boundary orientation; grain size inhomogeneity; lifetime; microstructural conditions; microstructure; stress evolution; Acceleration; Current density; Educational institutions; Electromigration; Finite difference methods; Grain boundaries; Grain size; Microstructure; Occupational stress; Thermal stresses;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787072
