Title :
Electron spin resonance (ESR) characterization of defects in low-k dielectrics
Author :
Moussavi, M. ; Passemard, G. ; Maisonobe, J.C. ; Turek, P.
Author_Institution :
Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
For the first time, the electron spin resonance (ESR) technique has been used for quantitative determination of carbon centered defects in aromatic polyether dielectric films. These defects, due to unpaired electrons, are linked to the annealing temperature and can not be evidenced by another method since structural modifications do not necessarily take place
Keywords :
annealing; dielectric thin films; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; paramagnetic resonance; polymer films; ESR defect characterization; annealing temperature; aromatic polyether dielectric films; carbon centered defects; electron spin resonance; electron spin resonance defect characterization; low-k dielectrics; structural modifications; unpaired electrons; Annealing; Crosstalk; Dielectric films; Electrons; Failure analysis; Paramagnetic resonance; Plasma temperature; Polymers; Spectroscopy; Thermal degradation;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787075
